IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package

Insulated  Gate  Bipolar  Transistors  (IGBTs)  from  International  Rectifier  have higher  usable  current  densities  than  comparable  bipolar  transistors,  while  at the  same  time  having  simpler  gate-drive  requirements  of  the  familiar  power MOSFET.  They provide substantial benefits to a host of high-voltage, high-current  applications.

Features of IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package :

1. Collector-to-Emitter  Breakdown  Voltage min : 500V
2. Emitter-to-Collector  Breakdown  Voltage min : 20V
3. Temperature  Coeff. of  Breakdown  Voltage type : 0.46V/°C
4. Gate  Threshold  Voltage min : 3.0V
5. Gate  Threshold  Voltage max : 5.5V
6. Temperature  Coeff.  of  Threshold  Voltage type : -11mV/°C
7. Forward  Transconductance min : 2.3S
8. Forward  Transconductance type : 8.1S
9. Gate-to-Emitter  Leakage  Current max : +100nA