Description
2N5416 PNP General Purpose Transistor
Features
- Collector-Emitter Volt (Vceo): 300V
- Collector-Base Volt (Vcbo): 350V
- Collector Current (Ic): 1.0A
- hfe: 30-120 @ 50mA
- Power Dissipation (Ptot): 1000mW
- Current-Gain-Bandwidth (ftotal): 15MHz
- Type: NPN
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3,340.00
