BF256 N-Channel RF Transistor (Pack of 5)

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.

Features of BF256 N-Channel RF Transistor:

• Drain-Gate Voltage (Vdg): 30V.
• Gate-Source Voltage (Vgs): 30V.
• Gate-Source Voltage (Vgs-off): 8V.
• Drain Current (Idss): 18mA.
• Power Dissipation (Ptot): 350mW.
• Type: N-Channel.

Applications of BF256 N-Channel RF Transistor:

• It is used in switching device.
• It is used in amplifying device.
• It is used in DIY kits.
• FM Radio.
• It is used in Electronic projects.