Description
2N1613 NPN General Purpose Transistor
Features
- Collector-Emitter Volt (Vceo): 50V
- Collector-Base Volt (Vcbo): 75V
- Collector Current (Ic): 0.5A
- hfe: 40-120 @ 150mA
- Power Dissipation (Ptot): 800mW
- Current-Gain-Bandwidth (ftotal): 80MHz
- Type: NPN
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