Description
2SB647 PNP General Purpose Transistor
Features
- Collector-Emitter Volt (Vceo): 80V
- Collector-Base Volt (Vcbo): 120V
- Collector Current (Ic): 1.0A
- hfe: 60-320 @ 150mA
- Power Dissipation (Ptot): 900mW
- Current-Gain-Bandwidth (ftotal): 140MHz
- Type: PNP
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1,790.00
