Description
2SB810 PNP General Purpose Transistor
Features
- Collector-Emitter Volt (Vceo): 30V
- Collector-Base Volt (Vcbo): 25V
- Collector Current (Ic): 0.7A
- hfe: 110-400 @ 100mA
- Power Dissipation (Ptot): 350mW
- Current-Gain-Bandwidth (ftotal): 160MHz
- Type: PNP
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